http://imechanica.org/node/3406 Comments for "Nanoscale holographic interferometry for strain measurements in electronic devices da Nature di Etienne Snoeck Nanoscale hologr" en http://imechanica.org/node/3406 <p><a href="http://dx.doi.org/10.1038/nature07049" target="_blank" class="entry-title-link">Nanoscale holographic interferometry for strain measurements in electronic devices<img class="entry-title-go-to" src="http://www.google.com/reader/ui/2412528845-go-to.gif" alt="" width="18" height="18" /></a></p> <p><span class="entry-source-title-parent">da <a href="http://www.google.com/reader/view/feed/http%3A%2F%2Fwww.nature.com%2Fnature%2Fcurrent_issue%2Frss" target="_blank" class="entry-source-title">Nature</a></span> di <span class="entry-author-name">Etienne Snoeck</span></p> <p> <strong>Nanoscale holographic interferometry for strain measurements in electronic devices</strong> </p> <p> Nature 453, 1086 (2008). <a href="http://dx.doi.org/10.1038/nature07049" target="_blank">doi:10.1038/nature07049</a> </p> <p> Authors: Martin H&yuml;tch, Florent Houdellier, Florian H&uuml;e<br /> &amp; Etienne Snoeck </p> <p> Strained silicon is now an integral feature of the latest generation<br /> of transistors and electronic devices because of the associated<br /> enhancement in carrier mobility. Strain is also expected to have an<br /> important role in future devices based on nanowires and in<br /> optoelectronic components. Different strategies have been used to<br /> engineer strain in devices, leading to complex strain distributions in<br /> two and three dimensions. Developing methods of strain measurement at<br /> the nanoscale has therefore been an important objective in recent years<br /> but has proved elusive in practice: none of the existing techniques<br /> combines the necessary spatial resolution, precision and field of view.<br /> For example, Raman spectroscopy or X-ray diffraction techniques can map<br /> strain at the micrometre scale, whereas transmission electron<br /> microscopy allows strain measurement at the nanometre scale but only<br /> over small sample areas. Here we present a technique capable of<br /> bridging this gap and measuring strain to high precision, with<br /> nanometre spatial resolution and for micrometre fields of view. Our<br /> method combines the advantages of moir&eacute; techniques with the flexibility<br /> of off-axis electron holography and is also applicable to relatively<br /> thick samples, thus reducing the influence of thin-film relaxation<br /> effects. </p> <p> &nbsp; </p> <br class="clear" /> http://imechanica.org/node/3406#comments research experimental mechanics Wed, 25 Jun 2008 16:39:22 -0400 Mike Ciavarella 3406 at http://imechanica.org