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Unusual domain evolution in semiconducting ferroelectrics: A phase field study

Jie Wang's picture

 http://www.sciencedirect.com/science/article/pii/S0375960113004234

The effect of electrical conductivity on the domain evolution of semiconducting ferroelectrics is investigated using a phase field model which includes the drift of space charges. Phase field simulations show that the tail-to-tail 90° charged domain wall appears during the domain formation in the semiconducting ferroelectrics at zero field, which is prohibited in common insulating ferroelectrics. Due to the screening of polarization charges, the domain switching takes place through the motion of head-to-head 180° charged domain wall in the semiconducting single-domain ferroelectrics subjected to an electric field. Comparing to the insulating ferroelectrics, the semiconducting ferroelectrics have a lower speed of domain evolution due to the decrease of mobility of charged domain walls. The response of semiconducting ferroelectrics to a mechanical load is also found different from that of insulating ferroelectrics.

Highlights:

•Phase field simulations reveal an unusual domain evolution with charged domain wall in the semiconducting ferroelectrics.

•The semiconducting ferroelectrics have a lower speed of domain evolution than the insulating ones.

•The thickness of charged domain wall is found larger than that of neutral wall, which is consistent with the experimental observation.

•The evolution of charged domain wall gives an insight into the current leakage in ferroelectric devices.
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