Strain-induced programmable half-metal and spin-gapless semiconductor in an edge-doped boron nitride nanoribbon

Shuze Zhu* and Teng Li*, Strain-induced programmable half-metal and spin-gapless semiconductor in an edge-doped boron nitride nanoribbon, Physical Review B, 93, 115401 (2016)

The search for half-metals and spin-gapless semiconductors has attracted extensive attention in material design for spintronics. Existing progress in such a search often requires peculiar atomistic lattice configuration and also lacks active control of the resulting electronic properties. Here we reveal that a boron nitride nanoribbon with a carbon-doped edge can be made a half-metal or a spin-gapless semiconductor in a programmable fashion. The mechanical strain serves as the on/off switches for functions of half-metal and spin-gapless semiconductor to occur. Our findings shed light on how the edge doping combined with strain engineering can affect electronic properties of two-dimensional materials.