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EM 397 Term Paper: Channeling crack of low-k dielectric films

Today low-k dielectric materials are integrated into computer chips to improve the operation speed and reduce the cross-talk noise. Due to weak mechanical properties of low-k dielectric materials, cohesive failure is subjected to occur. Channel cracking is one common mode of cohesive failure. In this term paper, several potential issues relevant to channel cracking of low-k dielectric thin films are reviewed.

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