The deadline of October 1, 2006 for my program of Mechanics & Structures of Materials was inadvertently omitted in our website. However, at the beginning of our CMS home page there are 2 deadlines listed for all programs. In the meantime any unsolicited proposals for my program, please put in GPG 04-23 as the Program Announcement [1st box]. In the 2nd box put in my program name [Mechanics & Structures of Materials].
A recent discussion here about the effect of surface stress on vibrations of microcantilever has gained some interest from our members. A few years ago, Zhigang and I looked at surface effect on buckling of a thin elastic film on a viscous layer (Huang and Suo, Thin Solid Films 429, 273-281, 2003). Although the physical phenomena (buckling vs vibrations) are different, the conclusion is quite consistent with Wei Hong and Pradeep's comments toward the end of the discussion. That is, surface stress only contributes as a residual stress and thus does not affect the buckling wavelength (frequency in space in analogy to frequency in time for vibrations).
1. iMechanica is free for all to use. iMechanica is hosted on a server at the School of Engineering and Applied Sciences, of Harvard University, and is managed by a team of volunteers -- mechanicians just like you. You pay nothing to post, and readers pay nothing to read. The limit of each upload file is 50MB, and each user is given 1GB server space.
One of the most common forms of cohesive failure observed in brittle thin film subjected to a tensile residual stress is channel cracking, a fracture mode in which through-film cracks propagate in the film. The crack growth rate depends on intrinsic film properties, residual stress, the presence of reactive species in the environments, and the precise film stack. In this paper, we investigate the effect of various buffer layers sandwiched between a brittle carbon-doped-silicate (CDS) film and a silicon substrate on channel cracking of the CDS film.
It is well established that the growth of microscopic voids near a crack tip plays a fundamental role in establishing the fracture behavior of ductile metals. Mechanics analyses of plastic void growth have typically assumed the plastic properties of the surrounding metal to be isotropic. However voids are typically of the order of magnitude of one micron so that they exist within individual grains of the metal, or along grain boundaries, at least at the initial growth stage. For that reason, the plastic properties of the material surrounding the void are most properly treated as being anisotropic, rather than isotropic.
In the uploaded preprint, the stress state and deformation state are derived around a cylindrical void in a hexagonal close packed single crystal. The orientation of the cylindrical void and the loading state relative to the crystal are chosen so that the deformation state is one of plane strain. The active slip systems reduce to a total of three slip systems which act within the plane of plane strain. The solution shows that the deformation state consists of angular sectors around the void within which only one slip system is active. Further, it is shown that the stress state and deformation state exhibit self-similarity both radially and circumferentially, as well as periodicity along certain logarithmic spirals which emanate from the void surface.
A possible explanation of the variety of fingerprints comes from the consideration of the mechanics of tissue growth. Formation of fingerprints can be a result of the surface buckling of the growing skin. Remarkably, the surface bifurcation enjoys infinite multiplicity. The latter can be a reason for the variety of fingerprints. Tissue morphogenesis with the surface buckling mechanism and the growth theory underlying this mechanism are presented in the attached notes.
M.A. Hussein and Jun He (Intel Corporation)
IEEE Transactions on Semiconductor Manufacturing, vol. 18, No. 1, p.69-85, 2005
In this work, we explain how the manufacturing technology and reliability for advanced interconnects is impacted by the choice of metallization and interlayer dielectric (ILD) materials. The replacement of aluminum alloys by copper, as the metal of choice at the 130nm technology node, mandated notable changes in integration, metallization, and patterning technologies. Those changes directly impacted the reliability performance of the interconnect system. Although further improvement in interconnect performance is being pursued through utilizing progressively lower dielectric constant (low-k) ILD materials from one technology node to another, the inherent weak mechanical strength of low-k ILDs and the potential for degradation in the dielectric constant during processing, pose serious challenges to the implementation of such materials in high volume manufacturing. We will consider the cases of two ILD materials; carbon-doped silicon dioxide (CDO) and low-k spin-on-polymer to illustrate the impact of ILD choice on the process technology and reliability of copper interconnects. preprint pdf 2.49 MB
Flip-chip plastic ball grid array (FC-PBGA) packages are widely used in high performance components. However, its die back is normally under tensile stress at low temperatures. This paper presents a probabilistic mechanics approach to predict the die failure rate in the FC-PBGA qualification process. The methodology consists of three parts:
Ting Y. Tsui, Andrew J. McKerrow, and Joost J. Vlassak
Published in the Journal of The Mechanics and Physics of Solids, 54 (5), 887-903 (2006)
Abstract – Organosilicate glass (OSG) is a material that is used as a dielectric in advanced integrated circuits. It has a network structure similar to that of amorphous silica where a fraction of the Si-O bonds has been replaced by organic groups. It is well known from prior work that OSG is sensitive to subcritical crack growth as water molecules in the environment are transported to the crack tip and assist in rupturing Si-O bonds at the crack tip. In this study, we demonstrate that exposure of an OSG containing film stack to water prior to fracture results in degradation of the adhesion of the film stack. This degradation is the result of the diffusion of water into the film stack. We propose a quantitative model to predict adhesion degradation as a function of exposure time by coupling the results of independent subcritical crack growth measurements with diffusion concentration profiles. The model agrees well with experimental data and provides a novel method for measuring the water diffusion coefficient in film stacks that contain OSG. This study has important implications for the reliability of advanced integrated circuits.
Computational models of the cell nucleus, along with experimental observations, can help in understanding the biomechanics of force-induced nuclear deformation and mechanisms of stress transition throughout the nucleus. Here, we develop a computational model for an isolated nucleus undergoing indentation, which includes separate components representing the nucleoplasm and the nuclear envelope. The nuclear envelope itself is composed of three separate layers: two thin elastic layers representing the inner and outer nuclear membranes and one thicker layer representing the nuclear lamina. The proposed model is capable of separating the structural role of major nuclear components in the force-induced biological response of the nucleus (and ultimately the cell). A systematic analysis is carried out to explore the role of major individual nuclear elements, namely inner and outer membranes, nuclear lamina, and nucleoplasm, as well as the loading and experimental factors such as indentation rate and probe angle, on the biomechanical response of an isolated nucleus in atomic force microscopy indentation experiment.
