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A viscous-elastic-plastic indentation model was used to assess the local variability of properties in healing porcine bone. Constant loading- and unloading-rate depth-sensing indentation tests were performed and properties were computed from nonlinear curve-fits of the unloading displacement-time data. Three properties were obtained from the fit: modulus (the coefficient of an elastic reversible process), hardness (the coefficient of a nonreversible, time-independent process) and viscosity (the coefficient of a nonreversible, time-dependent process). The region adjacent to the dental implant interface demonstrated a slightly depressed elastic modulus along with an increase in local time-dependence (lower viscosity); there was no clear trend in bone hardness with respect to the implant interface.

Jeannette M. Jacques, Ting Y. Tsui, Andrew J. McKerrow, and Robert Kraft

To improve capacitance delay performance of the advanced back-end-of-line (BEOL) structures, low dielectric constant organosilicate glass (OSG) has emerged as the predominant choice for intermetal insulator. The material has a characteristic tensile residual stress and low fracture toughness. A potential failure mechanism for this class of low-k dielectric films is catastrophic fracture due to channel cracking. During fabrication, channel cracks can also form in a time-dependent manner due to exposure to a particular environmental condition, commonly known as stress-corrosion cracking. Within this work, the environmental impacts of pressure, ambient, temperature, solution pH, and solvents upon the channel cracking of OSG thin films are characterized. Storage under high vacuum conditions and exposure to flowing dry nitrogen gas can significantly lower crack propagation rates. Cracking rates experience little fluctuation as a function of solution pH; however, exposure to aqueous solutions can increase the growth rate by three orders of magnitude.

A (001) surface of silicon consists of terraces of two variants, which have an identical atomic structure, except for a 90° rotation. We formulate a model to evolve the terraces under the combined action of electric current and applied strain. The electric current motivates adatoms to diffuse by a wind force, while the applied strain motivates adatoms to diffuse by changing the concentration of adatoms in equilibrium with each step. To promote one variant of terraces over the other, the wind force acts on the anisotropy in diffusivity, and the applied strain acts on the anisotropy in surface stress. Our model reproduces experimental observations of stationary states, in which the relative width of the two variants becomes independent of time. Our model also predicts a new instability, in which a small change in experimental variables (e.g., the applied strain and the electric current) may cause a large change in the relative width of the two variants.

Xi Wang, Yves Bellouard, Joost J. Vlassak

Published in Acta Materialia 53 (2005) p4955-4961.

Abstract — We present the results of a crystallization study on NiTi shape memory thin films in which amorphous films are annealed by a scanning laser. This technique has the advantage that shape memory properties can be spatially distributed as required by the application. A kinetics study shows that nucleation of the crystalline phase occurs homogenously in the films. Consequently, the laser annealing process produces polycrystalline films with a random crystallographic texture. The crystallized films have a uniform microstructure across the annealed areas. The material in the crystalline regions transforms reversibly to martensite on cooling from elevated temperature and stress measurements show that a significant recovery stress is achieved in the films upon transformation.

Cells function based on a complex set of interactions that control pathways resulting in ultimate cell fates including proliferation, differentiation, and apoptosis. The interworkings of his immensely dense network of intracellular molecules are influenced by more than random protein and nucleic acid distribution where their interactions culminate in distinct cellular function.

Low dielectric constant (low-k) is achieved often at the cost of degraded mechanical properties, making it difficult to integrate the dielectric in the back end of line (BEOL) and to package low-k chips. Development of low-k technology becomes costly and time-consuming. Therefore, more frequently than before, people resort to modeling to understand mechanical issues and avoid failures. In this paper we present three multilevel patterned film models to examine channel cracking in low-k BEOL. The effects of copper features, caps and multilevel interconnects are investigated and their implications to BEOL fabrication are discussed.

Low-k BEOL Mechanical Modeling
Liu, Xiao Hu; Lane, Michael W; Shaw, Thomas M; Liniger, Eric G; Rosenberg, Robert R; Edelstein, Daniel C
Advanced Metallization Conference 2004 (AMC 2004); San Diego, CA and Tokyo; USa and Japan; 19-21 Oct. 2004 and 28-29 Sept. 2004. pp. 361-367. 2005