fracture

Dear Colleagues:


The 13^th International Conference on Experimental Mechanics (ICEM13, http://www.icem13.gr) will be held on July 1-6, 2007 in Alexandroupolis, Greece. It is our pleasure to announce that the Conference will include a special symposium organized by us entitled, “Plasticity, Fracture and Fatigue at the Micro and Nano Scales,” which will focus on recent developments in this area within the larger scope of assessing research needs in a variety of applications of interest.

One of the most common forms of cohesive failure observed in brittle thin film subjected to a tensile residual stress is channel cracking, a fracture mode in which through-film cracks propagate in the film. The crack growth rate depends on intrinsic film properties, residual stress, the presence of reactive species in the environments, and the precise film stack. In this paper, we investigate the effect of various buffer layers sandwiched between a brittle carbon-doped-silicate (CDS) film and a silicon substrate on channel cracking of the CDS film.

Ting Y. Tsui, Andrew J. McKerrow, and Joost J. Vlassak

Published in the Journal of The Mechanics and Physics of Solids, 54 (5), 887-903 (2006)

Abstract – Organosilicate glass (OSG) is a material that is used as a dielectric in advanced integrated circuits. It has a network structure similar to that of amorphous silica where a fraction of the Si-O bonds has been replaced by organic groups. It is well known from prior work that OSG is sensitive to subcritical crack growth as water molecules in the environment are transported to the crack tip and assist in rupturing Si-O bonds at the crack tip. In this study, we demonstrate that exposure of an OSG containing film stack to water prior to fracture results in degradation of the adhesion of the film stack. This degradation is the result of the diffusion of water into the film stack. We propose a quantitative model to predict adhesion degradation as a function of exposure time by coupling the results of independent subcritical crack growth measurements with diffusion concentration profiles. The model agrees well with experimental data and provides a novel method for measuring the water diffusion coefficient in film stacks that contain OSG. This study has important implications for the reliability of advanced integrated circuits.