research
Fracture Mechanics Parameters Calculation
Finite element approximation of the fields of bulk and interfacial line defects
Chiqun Zhang Amit Acharya Saurabh Puri
A generalized disclination (g.disclination) theory [AF15] has been recently introduced that goes beyond treating standard translational and rotational Volterra defects in a continuously distributed defects approach; it is capable of treating the kinematics and dynamics of terminating lines of elastic strain and rotation discontinuities. In this work, a numerical method is developed to solve for the stress and distortion fields of g.disclination systems. Problems of small and finite deformation theory are considered. The fields of a single disclination, a single dislocation treated as a disclination dipole, a tilt grain boundary, a misfitting grain boundary with disconnections, a through twin boundary, a terminating twin boundary, a through grain boundary, a star disclination/penta-twin, a disclination loop (with twist and wedge segments), and a plate, a lenticular, and a needle inclusion are approximated. It is demonstrated that while the far-field topological identity of a dislocation of appropriate strength and a disclination-dipole plus a slip dislocation comprising a disconnection are the same, the latter microstructure is energetically favorable. This underscores the complementary importance of all of topology, geometry, and energetics in understanding defect mechanics. It is established that finite element approximations of fields of interfacial and bulk line defects can be achieved in a systematic and routine manner, thus contributing to the study of intricate defect microstructures in the scientific understanding and predictive design of materials. Our work also represents one systematic way of studying the interaction of (g.)disclinations and dislocations as topological defects, a subject of considerable subtlety and conceptual importance [Mer79, AMK17].
Feedback-Accelerated Picard Iteration for Orbit Propagation and Lambert’s Problem
This paper presents a new Feedback-Accelerated Picard Iteration method for solving long-term orbit propagation problems and perturbed Lambert’s problems. This method is developed by combining the collocation method and the variational iteration method over large-time-steps. The resulting iterative formulae are explicitly derived so that they can be directly adopted to solve problems in orbital mechanics. Several typical orbit regimes incorporating high-order gravity and air drag force are used to demonstrate the application of the proposed method in orbit propagation.
The 2nd International Conference on Advanced Modelling of Wave Propagation in Solids
The 2nd International Conference on Advanced Modelling of Wave Propagation in Solids
September 17-21 2018
Institute of Thermomechanics, The Czech Academy of Sciences, Prague, Czech Republic
The 2nd International Conference on Advanced Modelling of Wave Propagation in Solids intends to concentrate on topics such as:
Harnessing Surface Wrinkling-Cracking Patterns for Tunable Optical Transmittance
Optical devices and systems with tunable optical transmittance have recently attracted great interest due to their wide range of applications. However, the reported methods of realizing tunable optical transmittance still suffer from complex fabrication processes, high cost, unstable materials or low tuning range. In this study, we report a simple, cheap, and highly effective approach to achieve large tuning range of optical transmittance through harnessing surface wrinkling-cracking patterns on PDMS films.
Molecular dynamics study of phonon transport in graphyne nanotubes
We determine the thermal conductivities of a, b, and g graphyne nanotubes (GNTs) as well as of carbon
nanotubes (CNTs) using molecular dynamics simulations and the Green-Kubo relationship over the
temperature range 50e400 K. We find that GNTs demonstrate considerably lower thermal conductivity
than CNTs with the same diameter and length. Among a (alpha), b (beta), and g (gama)-GNTs, g-GNT has the highest thermal
conductivity at all temperatures. By comparing the phonon transport properties of GNTs with CNTs, we
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