A method to analyze dislocation injection from sharp features in strained silicon structures
Stresses inevitably arise in a microelectronic device due to mismatch in coefficients of thermal expansion, mismatch in lattice constants, and growth of materials. Moreover, in the technology of strained silicon devices, stresses have been deliberately introduced to increase carrier mobility. A device usually contains sharp features like edges and corners, which may intensify stresses, inject dislocations into silicon, and fail the device. On the basis of singular stress fields near the sharp features, this letter describes a method to obtain conditions that avert dislocations.