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A method to analyze dislocation injection from sharp features in strained silicon structures

Submitted by Zhen Zhang on

Stresses inevitably arise in a microelectronic device due to mismatch in coefficients of thermal expansion, mismatch in lattice constants, and growth of materials. Moreover, in the technology of strained silicon devices, stresses have been deliberately introduced to increase carrier mobility. A device usually contains sharp features like edges and corners, which may intensify stresses, inject dislocations into silicon, and fail the device. On the basis of singular stress fields near the sharp features, this letter describes a method to obtain conditions that avert dislocations.

Mechanics of climbing and attachment in twining plants

Submitted by Zhigang Suo on

In a recent article in Physical Review Letters, Alain Goriely and Sébastien Neukirch offer a mechanical model of how the free tip of a twining plant can hold onto a smooth support, allowing the plant to grow upward. The model also explains why these vines cannot grow on supports of too large a diameter. Read more.

The mechanics involves large deflection and bifurcation of a rod. I hope to hear opinions from people who know about the mechanics of plants.

Hibbitt Lectureship in Solid Mechanics at Cambridge University Engineering Department

Submitted by MichelleLOyen on

Applications are invited from suitably qualified candidates for a University Lectureship in Solid Mechanics, which falls within the Mechanics, Materials and Design Division of the Engineering Department. The successful candidate will take up the appointment as soon as possible.

The lectureship has recently been endowed by David and Susan Hibbitt, and the aim is to attract a high calibre researcher with a record of scholarship and research in experimental, computational and/or theoretical solid mechanics. Expertise is required in the mechanics of materials (structural, biological or energy materials, for example) and the successful candidate is expected to make a significant contribution to the Department’s teaching and research activities and to build a strong, externally funded research programme. The activity will fit within the Cambridge Centre for Micromechanics, which is an inter-departmental, inter-disciplinary research group housed within the Engineering Department.

Thoughts on Integration of Biomechanics and Applied Mechanics

Submitted by MichelleLOyen on

Biomechanics is a reasonably well-developed field of study, with a modern history usually linked to the pioneering work of Prof. Y.C. Fung in the 1960s. There are a number of dedicated biomechanics journals (including but not limited to the Journal of Biomechanics and the Journal of Biomechanical Engineering). The field is well-enough established to have several generations of researchers working on the subject at universities across the world.

MRS Symposium: Mechanics of Biological and Bio-Inspired Materials

Submitted by MichelleLOyen on

Symposium DD at the upcoming Materials Research Society Annual Meeting (Nov. 26-Dec. 1, Boston, MA) will be the latest in a series of MRS symposia on the mechanics of biological materials and materials designed following natural principles ("biomimetic" or "bio-inspired").   The full program is available at the MRS website (www.mrs.org).  This topic was also the subject of the August, 2006 focus issue of the Journal of Materials Research, which contained over 30 articles on the subject.

Statistics of Electromigration Lifetime Analyzed Using a Deterministic Transient Model

Submitted by Jun He on

The electromigration lifetime is measured for a large number of copper lines encapsulated in an organosilicate glass low-permittivity dielectric. Three testing variables are used: the line length, the electric current density, and the temperature. A copper line fails if a void near the upstream via grows to a critical volume that blocks the electric current. The critical volume varies from line to line, depending on line-end designs and chance variations in the microstructure. However, the statistical distribution of the critical volume (DCV) is expected to be independent of the testing variables. By contrast, the distribution of the lifetime (DLT) strongly depends on the testing variables. For a void to grow a substantial volume, the diffusion process averages over many grains along the line. Consequently, the void volume as a function of time, V(t), is insensitive to chance variations in the microstructure. As a simplification, we assume that the function V(t) is deterministic, and calculate this function using a transient model. We use the function V(t) to convert the experimentally measured DLT to the DCV. The same DCV predicts the DLT under untested conditions.

Variability in Bone Indentation

Submitted by MichelleLOyen on

A viscous-elastic-plastic indentation model was used to assess the local variability of properties in healing porcine bone. Constant loading- and unloading-rate depth-sensing indentation tests were performed and properties were computed from nonlinear curve-fits of the unloading displacement-time data. Three properties were obtained from the fit: modulus (the coefficient of an elastic reversible process), hardness (the coefficient of a nonreversible, time-independent process) and viscosity (the coefficient of a nonreversible, time-dependent process). The region adjacent to the dental implant interface demonstrated a slightly depressed elastic modulus along with an increase in local time-dependence (lower viscosity); there was no clear trend in bone hardness with respect to the implant interface.

Environmental Effects on Crack Characteristics for OSG Interconnect Materials

Submitted by Jeannette Jacques on

Jeannette M. Jacques, Ting Y. Tsui, Andrew J. McKerrow, and Robert Kraft

To improve capacitance delay performance of the advanced back-end-of-line (BEOL) structures, low dielectric constant organosilicate glass (OSG) has emerged as the predominant choice for intermetal insulator. The material has a characteristic tensile residual stress and low fracture toughness. A potential failure mechanism for this class of low-k dielectric films is catastrophic fracture due to channel cracking. During fabrication, channel cracks can also form in a time-dependent manner due to exposure to a particular environmental condition, commonly known as stress-corrosion cracking. Within this work, the environmental impacts of pressure, ambient, temperature, solution pH, and solvents upon the channel cracking of OSG thin films are characterized. Storage under high vacuum conditions and exposure to flowing dry nitrogen gas can significantly lower crack propagation rates. Cracking rates experience little fluctuation as a function of solution pH; however, exposure to aqueous solutions can increase the growth rate by three orders of magnitude.

Dynamics of terraces on a silicon surface due to the combined action of strain and electric current

Submitted by Wei Hong on

A (001) surface of silicon consists of terraces of two variants, which have an identical atomic structure, except for a 90° rotation. We formulate a model to evolve the terraces under the combined action of electric current and applied strain. The electric current motivates adatoms to diffuse by a wind force, while the applied strain motivates adatoms to diffuse by changing the concentration of adatoms in equilibrium with each step. To promote one variant of terraces over the other, the wind force acts on the anisotropy in diffusivity, and the applied strain acts on the anisotropy in surface stress. Our model reproduces experimental observations of stationary states, in which the relative width of the two variants becomes independent of time. Our model also predicts a new instability, in which a small change in experimental variables (e.g., the applied strain and the electric current) may cause a large change in the relative width of the two variants.