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Void-induced strain localization at interfaces

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We published this paper in APL on a study of the deformation near interfaces. It provides insight in the strain localization at the interface and its influence on the deformation in bulk metals. 

Abstract An optical full-field strain mapping technique has been used to provide direct evidence for the existence of a highly localized strain at the interface of stacked Nb/Nb bilayers during the compression tests loaded normal to the interface. No such strain localization is found in the bulk Nb away from the interface. The strain localization at the interfaces is due to a high void fraction resulting from the rough surfaces of Nb in contact, which prevents the extension of deformation bands in bulk Nb crossing the interface, while no distinguished feature from the stress-strain curve is detected.

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