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Saturated voids in interconnect lines due to thermal strains and electromigration

Submitted by Zhigang Suo on

Zhen Zhang and Zhigang Suo (Harvard), Jun He (Intel)

Attached is a set of slides presented at ASME Congress, 10 November 2006. Thermal strains and electromigration can cause voids to grow in conductor lines on semiconductor chips. This long-standing failure mode is exacerbated by the recent introduction of low-permittivity dielectrics. We describe a method to calculate the volume of a saturated void (VSV), attained in a steady state when each point in a conductor line is in a state of hydrostatic pressure, and the gradient of the pressure along the conductor line balances the electron wind. We show that the VSV will either increase or decrease when the coefficient of thermal expansion of the dielectric increases, and will increase when the elastic modulus of the dielectric decreases. The VSV will also increase when porous dielectrics and ultrathin liners are used. At operation conditions, both thermal strains and electromigration make significant contributions to the VSV. We discuss these results in the context of interconnect design.

Statistics of Electromigration Lifetime Analyzed Using a Deterministic Transient Model

Submitted by Jun He on

The electromigration lifetime is measured for a large number of copper lines encapsulated in an organosilicate glass low-permittivity dielectric. Three testing variables are used: the line length, the electric current density, and the temperature. A copper line fails if a void near the upstream via grows to a critical volume that blocks the electric current. The critical volume varies from line to line, depending on line-end designs and chance variations in the microstructure. However, the statistical distribution of the critical volume (DCV) is expected to be independent of the testing variables. By contrast, the distribution of the lifetime (DLT) strongly depends on the testing variables. For a void to grow a substantial volume, the diffusion process averages over many grains along the line. Consequently, the void volume as a function of time, V(t), is insensitive to chance variations in the microstructure. As a simplification, we assume that the function V(t) is deterministic, and calculate this function using a transient model. We use the function V(t) to convert the experimentally measured DLT to the DCV. The same DCV predicts the DLT under untested conditions.

ES 246 projects

Submitted by Anonymous (not verified) on

Each student creates a project that addresses a phenomenon or issue in plasticity theory, and presents it in class after the winter break. The scope of the projects is very wide: experimental, computational, or a critical discussion of one or more papers. The project contributes 30% of the grade, distributed as follows:

  • 5%: November 30 Thursday. Post your project proposal in iMechanica.
  1. Title. ES 246 project: e.g. Plastic buckling of plates.
  2. Tags. Use the following tags: ES 246, plasticity, Fall 2006, project
  3. Body. (i) Describe the project. (ii) Cite at least 1 journal article.
  • 5%: December 7 Thursday. Post a comment to critique the project proposal of at least 1 classmate.

Variability in Bone Indentation

Submitted by MichelleLOyen on

A viscous-elastic-plastic indentation model was used to assess the local variability of properties in healing porcine bone. Constant loading- and unloading-rate depth-sensing indentation tests were performed and properties were computed from nonlinear curve-fits of the unloading displacement-time data. Three properties were obtained from the fit: modulus (the coefficient of an elastic reversible process), hardness (the coefficient of a nonreversible, time-independent process) and viscosity (the coefficient of a nonreversible, time-dependent process). The region adjacent to the dental implant interface demonstrated a slightly depressed elastic modulus along with an increase in local time-dependence (lower viscosity); there was no clear trend in bone hardness with respect to the implant interface.

Environmental Effects on Crack Characteristics for OSG Interconnect Materials

Submitted by Jeannette Jacques on

Jeannette M. Jacques, Ting Y. Tsui, Andrew J. McKerrow, and Robert Kraft

To improve capacitance delay performance of the advanced back-end-of-line (BEOL) structures, low dielectric constant organosilicate glass (OSG) has emerged as the predominant choice for intermetal insulator. The material has a characteristic tensile residual stress and low fracture toughness. A potential failure mechanism for this class of low-k dielectric films is catastrophic fracture due to channel cracking. During fabrication, channel cracks can also form in a time-dependent manner due to exposure to a particular environmental condition, commonly known as stress-corrosion cracking. Within this work, the environmental impacts of pressure, ambient, temperature, solution pH, and solvents upon the channel cracking of OSG thin films are characterized. Storage under high vacuum conditions and exposure to flowing dry nitrogen gas can significantly lower crack propagation rates. Cracking rates experience little fluctuation as a function of solution pH; however, exposure to aqueous solutions can increase the growth rate by three orders of magnitude.

Dynamics of terraces on a silicon surface due to the combined action of strain and electric current

Submitted by Wei Hong on

A (001) surface of silicon consists of terraces of two variants, which have an identical atomic structure, except for a 90° rotation. We formulate a model to evolve the terraces under the combined action of electric current and applied strain. The electric current motivates adatoms to diffuse by a wind force, while the applied strain motivates adatoms to diffuse by changing the concentration of adatoms in equilibrium with each step. To promote one variant of terraces over the other, the wind force acts on the anisotropy in diffusivity, and the applied strain acts on the anisotropy in surface stress. Our model reproduces experimental observations of stationary states, in which the relative width of the two variants becomes independent of time. Our model also predicts a new instability, in which a small change in experimental variables (e.g., the applied strain and the electric current) may cause a large change in the relative width of the two variants.

On the solution to time-dependent Ginzburg-Laudau (TDGL) equation

Submitted by Jie Wang on

Time-dependent Ginzburg-Laudau (TDGL) equation is the simplest kinetic equation for the temporal evolution of a continuum field, which assumes that the rate of evolution of the field is linearly proportional to the thermodynamical driving force. The computation model based on this equation is also called phase field model. Phase field simulation can predict quite beautiful patterns of microstructures of material. It has been widely applied to simulating the evolution of microstructure by choosing different field variables. For example, using the single conserved field (concentration field), continuum phase field models has been employed to describe the pattern formation in phase-separating alloys (Nishimori and Onuki, 1990 Phys. Rev. B, 42,980) and the nanoscale pattern formation of an epitaxial monolayer (Lu and Suo, 2001 J. Mech. Phys. Solids, 49,1937). On the other hand, using the nonconserved field (polarization field), the phase field model has been utilized to simulating the formation of domain structure in ferroelectrics (Li et al. 2002  Acta Mater, 50,395). The thermodynamical driving force is usually nonlinear with respect to the field variable. In the case of nonlinearity, the solution to TDGL equation may not be unique. Different grid density, length of iteration step, initial state and random term (introduced to describe the nucleation process) may induce different results in the simulation. Does anyone investigate the effect of these factors on the final pattern? I wonder whether we can prove the solution is unique or not.