Full time position at Intel: Material Analysis Lab Engineer
Position is immediately available and needs to be filled soon. Interested candidate can contact me at email below.
li.han [at] intel.com
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Material Analysis Lab Engineer |
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Li Han's blog
Potential job opening (full time) at Intel
There is a potential full-time job opening at senior (Ph.D required) or junior (Master required) engineer level at Intel Oregon Materials Labs. As a Materials Analysis Engineer, the candidate will be part of Technology Development Labs responsible for identifying and developing materials, thermal mechanical characterization and failure analysis techniques in support of Intel's next generation silicon process development.
Modulating crack propagation in a multilayer stack with a super-layer
Quantitative characterization of interface adhesion and fracture properties of thin film materials is of fundamental and technological interests in modern technologies. Sandwich beam specimens used in fracture mechanics techniques, such as four-point bending and double-cantilever beam have been widely adopted, including the semiconductor industry.
Engineer position at Intel (Hillsboro,OR)
Intel has a potential opening for an entry-level Engineering position in the area of Thermal Mechanics. If you would like more information on this position please contact me at li.han [at] intel.com (li[dot]han[at]intel[dot]com) with current resume.
New methods of analyzing indentation experiments on very thin films
Abstract - Indentation experiments on very thin films are analyzed by employing a rigorous solution to model elastic substrate effects. Two cases are discussed: elastic indentations where film and substrate are anisotropic, and elasto-plastic indentations where significant material pile-up occurs. We demonstrate that the elastic modulus of a thin film can be accurately measured in both cases, even if there is significant elastic mismatch between film and substrate.
This manuscript has been accepted for publication in Journal of Materials Research.
Water diffusion and fracture behavior in nano-porous low-k dielectric film stacks
Among various low-dielectric constant low-k materials under development, organosilicate glasses
OSGs containing nanometer-size pores are leading candidates for use as intrametal dielectrics in
future microelectronics technologies. In this paper, we investigate the direct impact of water
diffusion on the fracture behavior of film stacks that contain porous OSG coatings. We demonstrate
that exposure of the film stacks to water causes significant degradation of the interfacial adhesion