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low-k dielectrics

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Stiffening of organosilicate glasses by organic cross-linking

Tue, 2010-06-29 13:24 - Li Han
research
mechanical properties
MD Simulation
low-k dielectrics
stiffness

Atomistic simulations show that organosilicates, used as low-permittivity dielectric materials in advanced integrated circuits, can be made substantially stiffer than amorphous silica, while maintaining a lower mass density. The enhanced stiffness is achieved by incorporating organic cross-links to replace bridging oxygen atoms in the silica network. To elucidate the mechanism responsible for the enhanced stiffness, the conformational changes in the network upon hydrostatic and shear loading are examined.

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EM 388F Term Paper: Subcritical Cracking of Low-k Dielectrics

Mon, 2008-04-07 21:46 - hualiang shi
fracture mechanics
University of Texas at Austin
term paper
EM 388F
Spring 2008
DCB
low-k dielectrics
subcritical cracking
FPB
first principle calculation

Abstract

 

With the scaling of VLSI, ultra low-k dielectrics with porosity are being introduced to reduce the capacitance coupling. But due to the weak bonding strengths, low-k dielectrics may fail by environmental-assisted subcritical cracking, fracture at stresses far below the loads required for catastrophic failure, causing reliability issues. In this term paper, several references are reviewed to investigate the mechanism of subcritical cracking at multiscale levels.

 

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