Do singular stress fields exist close to rigid corners?
See the photoelastic investigation at http://www.ing.unitn.it/~bigoni/stiffener.html
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By Martijn Feron, Zhen Zhang and Zhigang Suo
The mobility of charge carriers in silicon can be significantly increased when silicon is subject to a field of strain.In a microelectronic device, however, the strain field may be intensified at a sharp feature, such as an edge or a corner, injecting dislocations into silicon and ultimately failing the device. The strain field at an edge is singular, and is often a linear superposition of two modes of different exponents. We characterize the relative contribution of the two modes by a mode angle, and determine the critical slip systems as the amplitude of the load increases. We calculate the critical residual stress in a thin-film stripe bonded on a silicon substrate.
For a crack impinging upon a bimaterial interface at an angle, the singular stress field is a linear superposition of two modes, usually of unequal exponents, either a pair of complex conjugates, or two unequal real numbers. In the latter case, a stronger and a weaker singularity coexist (known as split singularities). We define a dimensionless parameter, called the local mode mixity, to characterize the proportion of the two modes at the length scale where the processes of fracture occur. We show that the weaker singularity can readily affect whether the crack will penetrate, or debond, the interface.
