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One of the most common forms of cohesive failure observed in brittle thin film subjected to a tensile residual stress is channel cracking, a fracture mode in which through-film cracks propagate in the film. The crack growth rate depends on intrinsic film properties, residual stress, the presence of reactive species in the environments, and the precise film stack. In this paper, we investigate the effect of various buffer layers sandwiched between a brittle carbon-doped-silicate (CDS) film and a silicon substrate on channel cracking of the CDS film.

It is well established that the growth of microscopic voids near a crack tip plays a fundamental role in establishing the fracture behavior of ductile metals. Mechanics analyses of plastic void growth have typically assumed the plastic properties of the surrounding metal to be isotropic. However voids are typically of the order of magnitude of one micron so that they exist within individual grains of the metal, or along grain boundaries, at least at the initial growth stage. For that reason, the plastic properties of the material surrounding the void are most properly treated as being anisotropic, rather than isotropic.

In the uploaded preprint, the stress state and deformation state are derived around a cylindrical void in a hexagonal close packed single crystal. The orientation of the cylindrical void and the loading state relative to the crystal are chosen so that the deformation state is one of plane strain. The active slip systems reduce to a total of three slip systems which act within the plane of plane strain. The solution shows that the deformation state consists of angular sectors around the void within which only one slip system is active. Further, it is shown that the stress state and deformation state exhibit self-similarity both radially and circumferentially, as well as periodicity along certain logarithmic spirals which emanate from the void surface.

A possible explanation of the variety of fingerprints comes from the consideration of the mechanics of tissue growth. Formation of fingerprints can be a result of the surface buckling of the growing skin. Remarkably, the surface bifurcation enjoys infinite multiplicity. The latter can be a reason for the variety of fingerprints. Tissue morphogenesis with the surface buckling mechanism and the growth theory underlying this mechanism are presented in the attached notes.

M.A. Hussein and Jun He (Intel Corporation)

IEEE Transactions on Semiconductor Manufacturing, vol. 18, No. 1, p.69-85, 2005

In this work, we explain how the manufacturing technology and reliability for advanced interconnects is impacted by the choice of metallization and interlayer dielectric (ILD) materials. The replacement of aluminum alloys by copper, as the metal of choice at the 130nm technology node, mandated notable changes in integration, metallization, and patterning technologies. Those changes directly impacted the reliability performance of the interconnect system. Although further improvement in interconnect performance is being pursued through utilizing progressively lower dielectric constant (low-k) ILD materials from one technology node to another, the inherent weak mechanical strength of low-k ILDs and the potential for degradation in the dielectric constant during processing, pose serious challenges to the implementation of such materials in high volume manufacturing. We will consider the cases of two ILD materials; carbon-doped silicon dioxide (CDO) and low-k spin-on-polymer to illustrate the impact of ILD choice on the process technology and reliability of copper interconnects. preprint pdf 2.49 MB

Flip-chip plastic ball grid array (FC-PBGA) packages are widely used in high performance components. However, its die back is normally under tensile stress at low temperatures. This paper presents a probabilistic mechanics approach to predict the die failure rate in the FC-PBGA qualification process. The methodology consists of three parts: