fracture mechanics

        I'm Francisco Thiago S. Aragao. Please call me Thiago. I'm currently enrolled at the University of Nebraska at Lincoln Civil Enginering Master's Program under the advisory of Dr. Yong-Rak Kim. I have also a minor course in Engineering Mechanics. Below I'm answering the questions from the Problem 1 of Fracture Mechanics' Assignment 1.

Prior courses in solid mechanics:

Lecture 3

Problem Set 1 (updated)

Thank you very much for taking this course. Some of the assignments of
the course will be done on iMechanica. The main purposes of these assignments are

• to expose students to resources for life-long learning, and
• to facilitate interactions among students who are taking the course from three campuses (Harvard, MIT and Nebraska).

Please take the following quick steps now.

fracture specimens and KIC

The slides for lecture 1 are attached.

Attached to this post are the notes John posted in his blog, with all pages rotated counterclockwise 90 degrees, for those who would like to read them on their computers.

The attached file is on T-stress of an interfacial crack in a bi-material strip. The geometry of the problem is the same with that of Suo and Hutchinson (1990, IJF). Using a conservation integral technique, a formula for T-stress is derived with two numerical factors.

doi:10.1016/j.ijsolstr.2006.12.026

Damage accumulation and fracture initiation in uncracked ductile solids subject to triaxial loading
Liang Xue, International Journal of Solids and Structures, Volume 44, Issue 16, 1 August 2007, Pages 5163-5181

Department of Engineering Mechanics

Tsinghua University

Beijing 100084, China

When the dielectric constant of an insulator in an interconnect is reduced, mechanical properties are often compromised, giving rise to significant challenges in interconnect integration and reliability. Due to low adhesion of the dielectric an interfacial crack may occur during fabrication and testing. To understand the effect of interconnect structure, an interfacial fracture mechanics model has been analyzed for patterned films undergoing a typical thermal excursion during the integration process.